2CLG3020_17 Datasheet, PDF (1/1 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 3.0A 20kV 100nS--High voltage silicon rectifier stack

2CLG3020
3.0A 20kV 100nS--High voltage silicon rectifier stack
HVGT High voltage silicon rectifier is made of
high quality glass passivated chip and high
reliability epoxy resin sealing structure, and
through professional testing equipment inspection
qualified after to customers.
SHAPE DISPLAY:
FEATURES:
1. High reliability design.
2. High voltage design.
3. High frequency design..
4. Conform to RoHS.
5. Epoxy resin molded in vacuumHave
anticorrosion in the surface.
SIZE: (Unit:mm)
HVGT NAME: HVC-152520
APPLICATIONS:
1. High frequency switching power supply.
2. Power supply of laser equipment .
3. General purpose high voltage rectifier.
4. Other.
MECHANICAL DATA:
1. Case: epoxy resin molding.
2. Terminal: external lead.
3. Net weight: 113 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
VRRM
Average Output Current
IF
Suege Current
IFSM
Junction Temperature
TJ
Allowable Operation Case Temperature
Tc
Storage Temperature
TSTG
Ta=25°C;
Ta=25°C;Resistive Load
Ta=25°C;8.3 mS
Data Value Units
20
kV
3.0
A
60
A
-40~+125
°C
125
°C
-40~+125
°C
ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)
Items
Symbols
Condition
Maximum Forward Voltage Drop
Maximum Reverse Current
Maximum Reverse Recovery Time
Junction Capacitance
VF
at 25°C;IF =IF(AV)
IR1
at 25°C;VR =VRRM
IR2
at 100°C;VR =VRRM
TRR
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR
CJ
at 25°C; VR=0V; f=1MHz
Data value Units
24
V
5.0
uA
50
uA
100
nS
--
pF
GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: [e-mail]
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