1N6519_16 Datasheet, PDF (1/2 Pages) GETAI ELECTRONICS DEVICE CO., LTD – 500mA 10kV 70nS-HIGH VOLTAGE DIODE

1N6519
500mA 10kV 70nS-HIGH VOLTAGE DIODE
High reliability resin molded type high voltage diode
in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings :
Features
High speed switching
Epoxy resin molded in vacuum,
Have anticorrosion in the surface
High surge resisitivity for CRT discharge
High reliability design
Avalanche characteristic
Applications
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
General purpose high voltage rectifier,
Voltage multiplier assembly.
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1N65H1V9GT
DO-590 Series
Lead Diameter 1.28mm
23mm
9.0mm
Items
Symbols
Condition
Repetitive Peak Renerse Voltage
V RRM
Ta=25°C,
Average Output Current
IO
Ta=25°C,Resistive Load
5.0mm
1N6519
10
500
Units
kV
mA
Suege Current
I FSM
Ta=25°C,8.3 ms
25
A peak
Junction Temperature
Tj
125
°C
Allowable Operation Case Temperature Tc
Storage Temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Symbols
Conditions
Maximum Forward Voltage Drop
VF
at 25°C,IF =IF(AV)
125
°C
-55 to +165
°C
1N6519
13
Units
V
Maximum Reverse Current
IR1
at 25°C,VR =VRRM
1.0
uA
Maximum Reverse Recovery Time
IR2
at 100°C,V R =VRRM
Trr
at 25°C; I F =0.5A; I R =1.0A; Irr =0.25A;
25
uA
70
nS
Junction Capacitance
Cj
at 25°C; V R=0V,f=1kHz
8.0
pF
n n n GETE ELECTRONIC CO.,LTD
GUANGZHOU * CHINA
E-mail: [e-mail]
China Tel: [phone]
Tel: [phone]
Fax: [phone]
www.getedz.com
www.hvgtsemi.com
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