GA16JT17-247 Datasheet, PDF (9/12 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

GA16JT17-247
Figure 25: Typical steady state gate current supplied by the
GA03IDDJT30-FR4 board for the GA16JT17-247 with the on
board resistance of 3.75 Ω
Figure 26: Maximum gate resistance for safe operation of
the GA16JT17-247 at different drain currents using the
GA03IDDJT30-FR4 board.
B:2: High Speed, Low Loss Drive with Boost Inductor
A High Speed, Low-Loss Driver with Boost Inductor is also capable of driving the GA16JT17-247 at high-speed. It utilizes a gate drive inductor
instead of a capacitor to provide the high-current gate current pulses I_G,on and I_G,off. During operation, inductor L is charged to a specified I_G,on
current value then made to discharge I_L into the SJT gate pin using logic control of S₁, S₂, S₃, and S₄, as shown in Figure 27. After turn on,
while the device remains on the necessary steady state gate current I_G,steady is supplied from source VCC through RG. Please refer to the
article “A current-source concept for fast and efficient driving of silicon carbide transistors” by Dr. Jacek Rąbkowski for additional information
on this driving topology.⁴
Figure 27: Simplified Inductive Pulsed Drive Topology
3 _{– RG = (1/RG1 +1/RG2)}-1_{. Driver is pre-installed with RG1 = RG2 = 7.5 Ω}
4 _{– Archives of Electrical Engineering. Volume 62, Issue 2, Pages 333–343, ISSN (Print) 0004-0746, DOI: 10.2478/aee-2013-0026, June 2013}
Nov 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
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