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GB50SLT12-CAL_15 Datasheet, PDF (5/5 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode
Die Datasheet
GB50SLT12-CAL
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GB50SLT12-CAL_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GB50SLT12-CAL.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision: 1.0
$
*
$Date: 20-SEP-2013
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY OF ANY
* KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED TO ANY IMPLIED
* WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB50SLT12-CAL SPICE Model
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.SUBCKT GB50SLT12 ANODE KATHODE
D1 ANODE KATHODE GB50SLT12_SCHOTTKY
D2 ANODE KATHODE GB50SLT12_SURGE
.MODEL GB50SLT12_SCHOTTKY D
+ IS
1.99E-16
RS
0.015652965
+N
1
IKF
1000
+ EG
1.2
XTI
3
+ TRS1
0.0042
TRS2
1.3E-05
+ CJO
3.86E-09
VJ
1.362328465
+M
0.48198551
FC
0.5
+ TT
1.00E-10
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
50
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semi
.MODEL GB50SLT12_SURGE D
+ IS
1.54E-19
RS
0.1
+ TRS1
-0.004
N
3.941
+ EG
3.23
IKF
19
+ XTI
0
FC
0.5
+ TT
0
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
50
TYPE
SiC_PiN
.ENDS
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* End of GB50SLT12-CAL SPICE Model
Sep 2013
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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