GB05SHT06-CAU_15 Datasheet, PDF (5/5 Pages) GeneSiC Semiconductor, Inc. – High Temperature Silicon Carbide Power Schottky Diode

Die Datasheet
GB05SHT06-CAU
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/baredie/schottky/GB05SHT06-CAU_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GB05SHT06-CAU.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision: 1.0
$
*
$Date: 05-SEP-2013
$
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*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB05SHT06-CAU SPICE Model
*
.SUBCKT GB05SHT06 ANODE KATHODE
D1 ANODE KATHODE GB05SHT06_25C; Call the Schottky Diode Model
D2 ANODE KATHODE GB05SHT06_PIN; Call the PiN Diode Model
.MODEL GB05SHT06_25C D
+ IS
1.99E-17
RS
0.12463
+N
1
IKF
569.082
+ EG
1.2
XTI
3
+ TRS1
0.0035
TRS2
3.87E-05
+ CJO
3.38E-10
VJ
0.41772
+M
1.5479
FC
0.5
+ TT
1.00E-10
BV
650
+ IBV
1.00E-03
VPK
650
+ IAVE
5
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GB05SHT06_PIN D
+ IS
1.33E-10
RS
0.31147
+N
5
IKF
0
+ EG
3.23
XTI
-10
+ FC
0.5
TT
0
+ BV
650
IBV
1.00E-03
+ VPK
650
IAVE
5
+ TYPE
SiC_PiN
.ENDS
*
* End of GB05SHT06-CAU SPICE Model
Sep 2013
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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