GB02SHT01-46 Datasheet, PDF (4/4 Pages) GeneSiC Semiconductor, Inc. – Power Schottky Diode

GB02SHT01-46
SPICE Model Parameters
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software program for simulation of the GB02SHT01-46.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision: 1.0
$
*
$Date: 29-AUG-2014
$
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*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
*
COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB02SHT01-46 SPICE Model
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.SUBCKT GB02SHT01ANODE KATHODE
D1 ANODE KATHODE GB02SHT01_25C; Call the Schottky Diode Model
D2 ANODE KATHODE GB02SHT01_PIN; Call the PiN Diode Model
.MODEL GB02SHT01_25C D
+ IS
3.57E-18
RS
0.49751
+ TRS1
0.0057
TRS2
2.40E-05
+N
1
IKF
322
+ EG
1.2
XTI
3
+ CJO
9.12E-11
VJ
0.371817384
+M
1.527759838
FC
0.5
+ TT
1.00E-10
BV
100
+ IBV
1.00E-03
VPK
100
+ IAVE
2
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GB02SHT01_PIN D
+ IS
5.73E-11
RS
0.72994
+N
5
IKF
800
+ EG
3.23
XTI
-14
+ FC
0.5
TT
0
+ BV
100
IBV
1.00E-03
+ VPK
100
IAVE
2
+ TYPE
SiC_PiN
.ENDS
*
* End of GB02SHT01 SPICE Model
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-schottky-rectifiers/
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