GA01PNS80-CAL_15 Datasheet, PDF (4/6 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide PiN Diode Chip

Mechanical Parameters
Die Dimensions
Anode pad size
Area total / active
Die Thickness
Wafer Size
Flat Position
Die Frontside Passivation
Anode Pad Metallization
Backside Cathode Metallization
Die Attach
Wire Bond
Reject ink dot size
Recommended storage environment
Chip Dimensions:
Die Datasheet
GA01PNS80-CAL
2.4 x 2.4
mm²
Φ 0.98
5.76/0.75
mm
mm²
450
µm
76.2
mm
0
deg
Polyimide
4000 nm Al
400 nm Ni + 200 nm Au
Electrically conductive glue or solder
Al ≤ 130 µm
Φ ≥ 0.3 mm
Store in original container, in dry nitrogen,
< 6 months at an ambient temperature of 23 °C
DIE
A
[mm]
B
[mm]
2.4
2.4
METAL
C
[mm]
0.98
Apr 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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