GB05SHT12-CAL Datasheet, PDF (3/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode Chip

GB05SHT12-CAL
SPICE Model Parameters
Copy the following code into a SPICE software program for simulation of the GB05SHT12-CAL device.
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MODEL OF GeneSiC Semiconductor Inc.
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$Revision: 1.0
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$Date: 05-SEP-2013
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GeneSiC Semiconductor Inc.
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43670 Trade Center Place Ste. 155
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Dulles, VA 20166
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httphttp://www.genesicsemi.com/index.php/sic-products/schottky
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COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
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ALL RIGHTS RESERVED
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* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
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* Start of GB05SHT12-CAL SPICE Model
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.SUBCKT GB05SHT12 ANODE KATHODE
R1 ANODE INT R=((TEMP-24)*0.0021); Temperature Dependant Resistor
D1 INT KATHODE GB05SHT12_25C; Call the 25C Diode Model
D2 ANODE KATHODE GB05SHT12_PIN; Call the PiN Diode Model
.MODEL GB05SHT12_25C D
+ IS
4.45E-15
RS
0.206
+N
1.18144
IKF
112.92
+ EG
1.2
XTI
3
+ CJO
3.00E-10
VJ
0.419
+M
1.6
FC
0.5
+ TT
1.00E-10
BV
1500
+ IBV
1.00E-03
VPK
1200
+ IAVE
5
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GB05SHT12_PIN D
+ IS
2.93E-12
RS
0.35326
+N
+ EG
4.6113
3.23
IKF
0.0043236
XTI
60
+ FC
0.5
TT
0
+ BV
1500
IBV
1.00E-03
+ VPK
1200
IAVE
5
+ TYPE
SiC_PiN
.ENDS
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* End of GB05SHT12-CAL SPICE Model
Sep 2013
http://www.genesicsemi.com/index.php/hit-sic/baredie
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