GB01SHT12-CAU_15 Datasheet, PDF (3/5 Pages) GeneSiC Semiconductor, Inc. – High Temperature Silicon Carbide Power Schottky Diode

Mechanical Parameters
Die Dimensions
Anode pad size
Die Area total / active
Die Thickness
Wafer Size
Flat Position
Die Frontside Passivation
Anode Pad Metallization
Backside Cathode Metallization
Die Attach
Wire Bond
Reject ink dot size
Recommended storage environment
Chip Dimensions:
Die Datasheet
GB01SHT12-CAU
0.9 x 0.9
0.64 x 0.64
mm²
0.81/0.36
360
µm
100
mm
0
deg
Polyimide
400 nm Ni + 200 nm Au
400 nm Ni + 200 nm Au
Electrically conductive glue or solder
Au ≤ 76 µm
Φ ≥ 0.3 mm
Store in original container, in dry nitrogen,
< 6 months at an ambient temperature of 23 °C
DIE
A
[mm]
B
[mm]
0.9
0.9
METAL
C
[mm]
D
[mm]
0.64
0.64
WIRE
E
[mm]
0.6
BONDABLE
F
[mm]
0.6
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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