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GB01SHT06-CAU Datasheet, PDF (3/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Power Schottky Diode Chip
GB01SHT06-CAU
SPICE Model Parameters
Copy the following code into a SPICE software program for simulation of the GB01SHT06-CAU device.
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MODEL OF GeneSiC Semiconductor Inc.
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*
$Revision: 1.0
$
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$Date: 05-SEP-2013
$
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*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
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httphttp://www.genesicsemi.com/index.php/sic-products/schottky
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COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
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ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB01SHT06-CAU SPICE Model
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.SUBCKT GB01SHT06 ANODE KATHODE
D1 ANODE KATHODE GB01SHT06_25C; Call the Schottky Diode Model
D2 ANODE KATHODE GB01SHT06_PIN; Call the PiN Diode Model
.MODEL GB01SHT06_25C D
+ IS
3.57E-18
RS
0.49751
+ TRS1
0.0057
TRS2
2.40E-05
+N
1
IKF
322
+ EG
1.2
XTI
3
+ CJO
9.12E-11
VJ
0.371817384
+M
1.527759838
FC
0.5
+ TT
1.00E-10
BV
800
+ IBV
1.00E-03
VPK
650
+ IAVE
1
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semiconductor
.MODEL GB01SHT06_PIN D
+ IS
5.73E-11
RS
0.72994
+N
5
IKF
800
+ EG
3.23
XTI
-14
+ FC
0.5
TT
0
+ BV
800
IBV
1.00E-03
+ VPK
650
IAVE
1
+ TYPE
SiC_PiN
.ENDS
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* End of GB01SHT06-CAU SPICE Model
Sep 2013
http://www.genesicsemi.com/index.php/hit-sic/baredie
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