GA080TH65-227SP Datasheet, PDF (3/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Carbide Thyristor

GA080TH65
Figure 7: Typical Reverse Recovery Characteristics at 25 °C
Figure 8: Typical Transient Thermal Impedance
Date
2010/11/13
Revision History
Revision
Comments
1
First generation release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury
and/or property damage.
November 2010
Preliminary Datasheet
http://www.genesicsemi.com
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