GA05JT01-46 Datasheet, PDF (2/11 Pages) GeneSiC Semiconductor, Inc. – Normally – OFF Silicon Carbide Junction Transistor

GA05JT01-46
Section II: Static Electrical Characteristics
Parameter
A: On State
Drain – Source On Resistance
Gate – Source Saturation Voltage
DC Current Gain
B: Off State
Drain Leakage Current
Gate Leakage Current
C: Thermal
Thermal resistance, junction - case
Symbol
Conditions
Min.
RDS(ON)
VGS,sat
hFE
ID = 5 A, Tj = 25 °C
ID = 5 A, Tj = 125 °C
ID = 5 A, Tj = 175 °C
ID = 5 A, Tj = 225 °C
ID = 5 A, ID/IG = 40, Tj = 25 °C
ID = 5 A, ID/IG = 30, Tj = 175 °C
VDS = 5 V, ID = 5 A, Tj = 25 °C
VDS = 5 V, ID = 5 A, Tj = 125 °C
VDS = 5 V, ID = 5 A, Tj = 175 °C
VDS = 5 V, ID = 5 A, Tj = 225 °C
VR = 100 V, VGS = 0 V, Tj = 25 °C
IDSS
VR = 100 V, VGS = 0 V, Tj = 125 °C
VR = 100 V, VGS = 0 V, Tj = 225 °C
ISG
VSG = 20 V, Tj = 25 °C
RthJC
Assumes thermal conduction through
baseplate only actual value may be lower
Value
Typical
240
368
455
620
3.45
3.22
113
79
72
69
10
50
100
20
9.86
Max. ^{Unit Notes}
mΩ Fig. 5
V
Fig. 7
–
Fig. 5
100
500 μA
1000
nA
Fig. 6
°C/W Fig. 17
Section III: Dynamic Electrical Characteristics
Parameter
Symbol
Conditions
Min.
A: Capacitance and Gate Charge
Input Capacitance
Reverse Transfer/Output Capacitance
Output Capacitance Stored Energy
Effective Output Capacitance,
time related
Effective Output Capacitance,
energy related
Gate-Source Charge
Gate-Drain Charge
Gate Charge - Total
B: Switching¹
Ciss
Crss/Coss
EOSS
Coss,tr
VGS = 0 V, VD = 100 V, f = 1 MHz
VD = 100 V, f = 1 MHz
VGS = 0 V, VD = 100 V, f = 1 MHz
ID = constant, VGS = 0 V, VDS = 0…70 V
Coss,er
QGS
QGD
QG
VGS = 0 V, VDS = 0…70 V
VGS = -5…3 V
VGS = 0 V, VDS = 0…70 V
Internal Gate Resistance – zero bias
Internal Gate Resistance – ON
Turn On Delay Time
Fall Time, VDS
Turn Off Delay Time
Rise Time, VDS
Turn On Delay Time
Fall Time, VDS
Turn Off Delay Time
Rise Time, VDS
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
Turn-On Energy Per Pulse
Turn-Off Energy Per Pulse
Total Switching Energy
RG(INT-ZERO)
RG(INT-ON)
td(on)
tf
td(off)
tr
td(on)
tf
td(off)
tr
Eon
Eoff
Etot
Eon
Eoff
Etot
f = 1 MHz, VAC = 50 mV, VDS = VGS = 0 V ,
Tj = 225 ºC
VGS > 2.5 V, VDS = 0 V, Tj = 225 ºC
Tj = 25 ºC, VDS = 70 V,
ID = 5 A, Resistive Load
Refer to Section V: for additional driving
information
Tj = 225 ºC, VDS = 70 V,
ID = 5 A, Resistive Load
Refer to Section V: for additional driving
information
Tj = 25 ºC, VDS = 70 V,
ID = 5 A, Inductive Load
Tj = 225 ºC, VDS = 70 V,
ID = 5 A, Inductive Load
1 _{– All times are relative to the Drain-Source Voltage VDS}
Value
Typical
547
45
0.2
83
67
3.7
5.8
9.5
14.5
0.37
8.0
7.4
14.0
4.2
8.0
7.8
28.0
2.3
3.6
0.4
4.0
3.6
0.5
4.1
Max. ^{Unit Notes}
pF
Fig. 7
pF
Fig. 7
µJ
Fig. 8
pF
pF
nC
nC
nC
Ω
Ω
ns
ns Fig. 11, 13
ns
ns Fig. 12, 14
ns
ns Fig. 11
ns
ns Fig. 12
µJ Fig. 11, 13
µJ Fig. 12, 14
µJ
µJ Fig. 11
µJ Fig. 12
µJ
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
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