UFT7340M Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 V to 600 V V_RRM
• Not ESD Sensitive
UFT7340M thru UFT7360M
V_RRM = 400 V - 600 V
I_F = 70 A
D61-3M Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
UFT7340M
UFT7360M
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
400
280
400
-55 to 150
-55 to 150
600
420
600
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
UFT7340M
UFT7360M
Average forward current (per pkg) I_F(AV)
T_C = 125 °C
70
70
Peak forward surge current (per
leg)
I_FSM t_p = 8.3 ms, half sine
800
800
Maximum instantaneous forward
voltage (per leg)
V_F I_FM = 35 A, T_j = 25 °C
1.3
1.7
Maximum instantaneous reverse
T_j = 25 °C
20
20
current at rated DC blocking
I_R
voltage (per leg)
T_j = 125 °C
3
3
Maximum reverse recovery time
(per leg)
T_rr
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
75
90
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
R_ΘJC
1.2
1.2
Unit
V
V
V
°C
°C
Unit
A
A
V
μA
mA
ns
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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