S70V Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 1400 V to 1600 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
S70V thru S70YR
V_RRM = 1400 V - 1600 V
I_F = 70 A
DO-5 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
S70V (R)
S70Y (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
I_F
I_F,SM
T_j
T_stg
T_C ≤ 110 °C
T_C = 25 °C, t_p = 8.3 ms
1400
990
1400
70
1250
-55 to 150
-55 to 150
1600
1130
1600
70
1250
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
S70V (R)
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
V_F
I_F = 70 A, T_j = 25 °C
I_R
V_R = 100 V, T_j = 25 °C
V_R = 100 V, T_j = 150 °C
R_thJC
1.1
10
4.5
0.65
S70Y (R)
1.1
10
4.5
0.65
Unit
V
V
V
A
A
°C
°C
Unit
V
μA
mA
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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