S70B Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 100 V to 600 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
S70B thru S70JR
V_RRM = 100 V - 600 V
I_F =70 A
DO-5 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
S70B (R) S70D (R) S70G (R) S70J (R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
V_RRM
V_RMS
V_DC
I_F
I_F,SM
T_C ≤ 140 °C
T_C = 25 °C, t_p = 8.3 ms
100
70
100
70
1250
200
140
200
70
1250
400
600
V
280
420
V
400
600
V
70
70
A
1250
1250
A
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
S70B (R)
Diode forward voltage
V_F
I_F = 70 A, T_j = 25 °C
1.1
Reverse current
I_R
V_R = 100 V, T_j = 25 °C
V_R = 100 V, T_j = 180 °C
10
15
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
0.65
S70D (R)
1.1
10
15
0.65
S70G (R)
1.1
10
15
S70J (R)
1.1
10
9
0.65
0.65
Unit
V
μA
mA
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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