S6B Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 100 V to 600 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
S6B thru S6JR
V_RRM = 100 V - 600 V
I_F = 6 A
DO-4 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
S6B (R)
S6D (R)
S6G (R)
S6J (R)
Unit
Repetitive peak reverse voltage V_RRM
100
200
400
600
V
RMS reverse voltage
V_RMS
70
140
280
420
V
DC blocking voltage
V_DC
Continuous forward current
I_F
T_C ≤ 160 °C
100
200
400
600
V
6
6
6
6
A
Surge non-repetitive forward
current, Half Sine Wave
I_F,SM
T_C = 25 °C, t_p = 8.3 ms
167
167
167
167
A
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
S6B (R)
Diode forward voltage
V_F
I_F = 6 A, T_j = 25 °C
1.1
Reverse current
I_R
V_R = 100 V, T_j = 25 °C
V_R = 100 V, T_j = 175 °C
10
12
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
2.50
S6D (R)
1.1
10
12
2.50
S6G (R)
S6J (R)
Unit
1.1
1.1
V
10
10
μA
12
12
mA
2.50
2.50
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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