S320J Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 600 V to 1200 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
S320J thru S320QR
V_RRM = 600 V - 1200 V
I_F = 320 A
DO-9 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
S320J (R) S320K (R) S320M (R) S320Q (R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
V_RRM
V_RMS
V_DC
I_F
I_F,SM
T_C ≤ 100 °C
T_C = 25 °C, t_p = 8.3 ms
600
420
600
320
4700
800
566
800
320
4700
1000
1200
V
707
848
V
1000
1200
V
320
320
A
4700
4700
A
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 ‐55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 ‐55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
S320J (R)
Diode forward voltage
V_F
I_F = 300 A, T_j = 25 °C
1.2
Reverse current
I_R
V_R = 600 V, T_j = 25 °C
V_R = 600 V, T_j = 175 °C
10
12
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
0.16
S320K (R)
1.2
10
12
S320M (R)
1.2
10
12
S320Q (R)
1.2
10
12
0.16
0.16
0.16
Unit
V
μA
mA
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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