S300B Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types up to 600 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
S300B thru S300JR
V_RRM = 100 V - 600 V
I_F = 300 A
DO-9 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
S300B (R) S300D (R) S300E (R) S300G (R) S300J (R) Unit
Repetitive peak reverse
voltage
V_RRM
100
200
300
400
600
V
RMS reverse voltage
V_RMS
70
140
212
280
420
V
DC blocking voltage
V_DC
100
200
300
400
600
V
Continuous forward
current
I_F
T_C ≤ 130 °C
300
300
300
300
300
A
Surge non-repetitive
forward current, Half Sine IF,SM TC = 25 °C, tp = 8.3 ms
6850
6850
6850
6850
6850
A
Wave
Operating temperature
T_j
Storage temperature
T_stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
S300B (R) S300D (R)
Diode forward voltage
V_F
I_F = 300 A, T_j = 25 °C
1.2
1.2
Reverse current
I_R
V_R = 100 V, T_j = 25 °C
V_R = 100 V, T_j = 175 °C
10
12
10
12
Thermal characteristics
Thermal resistance,
junction - case
R_thJC
0.16
0.16
S300E (R)
1.2
10
12
0.16
S300G (R)
1.2
10
12
0.16
S300J (R)
1.2
10
12
0.16
Unit
V
μA
mA
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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