S12K Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 800 V to 1200 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
S12K thru S12QR
V_RRM = 800 V - 1200 V
I_F = 12 A
DO-4 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
S12K (R)
S12M (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
I_F
I_F,SM
T_j
T_stg
T_C ≤ 144 °C
T_C = 25 °C, t_p = 8.3 ms
800
560
800
12
280
-55 to 150
-55 to 150
1000
700
1000
12
280
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
S12K (R)
Diode forward voltage
V_F
I_F = 12 A, T_j = 25 °C
1.1
Reverse current
I_R
V_R = 50 V, T_j = 25 °C
V_R = 50 V, T_j = 175 °C
10
12
Thermal characteristics
Thermal resistance, junction -
case
R_thJC
2.50
S12M (R)
1.1
10
12
2.50
S12Q (R)
1200
840
1200
12
280
-55 to 150
-55 to 150
S12Q (R)
1.1
10
12
2.50
Unit
V
V
V
A
A
°C
°C
Unit
V
μA
mA
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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