MURT10040 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Super Fast Recovery Diode

Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 V to 600 V V_RRM
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive
MURT10040 thru MURT10060R
V_RRM = 400 V - 600 V
I_F(AV) = 100 A
Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURT10040(R)
MURT10060(R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
400
283
400
-55 to 150
-55 to 150
600
424
600
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MURT10040(R)
MURT10060(R)
Average forward current (per pkg)
I_F(AV)
T_C = 140 °C
Peak forward surge current (per leg)
Maximum instantaneous forward
voltage (per leg)
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
Maximum reverse recovery time (per
leg)
Thermal characteristics
Maximum thermal resistance, junction
- case (per leg)
I_FSM
V_F
I_R
T_rr
R_ΘJC
t_p = 8.3 ms, half sine
I_FM = 50 A, T_j = 25 °C
T_j = 25 °C
T_j = 125 °C
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
100
1500
1.3
25
1
90
1.0
100
1500
1.7
25
1
110
1.0
Unit
V
V
V
°C
°C
Unit
A
A
V
μA
mA
nS
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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