MURT10005 Datasheet, PDF (1/3 Pages) America Semiconductor, LLC – HIGH POWER- SUPER FAST RECTIFIERS

Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 200 V V_RRM
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive
MURT10005 thru MURT10020R
V_RRM = 50 V - 200 V
I_F(AV) = 100 A
Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURT10005(R) MURT10010(R) MURT10020(R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
50
35
50
-55 to 150
-55 to 150
100
71
100
-55 to 150
-55 to 150
200
V
141
V
200
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MURT10005(R)
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Maximum reverse recovery
time (per leg)
Thermal characteristics
Thermal resistance, junction -
case (per leg)
I_F(AV)
I_FSM
V_F
I_R
T_rr
R_ΘJC
T_C = 140 °C
t_p = 8.3 ms, half sine
I_FM = 50 A, T_j = 25 °C
T_j = 25 °C
T_j = 125 °C
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
100
1500
1.0
25
1
75
1.0
MURT10010(R)
100
1500
1.0
25
1
75
1.0
MURT10020(R) Unit
100
A
1500
A
1.0
V
25
μA
1
mA
75
nS
1.0
°C/W
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