MURH7040 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Super Fast Recovery Diode

Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 V to 600 V V_RRM
• Not ESD Sensitive
MURH7040 thru MURH7060R
V_RRM = 400 V - 600 V
I_F(AV) = 70 A
D-67 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURH7040(R)
MURH7060(R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
400
280
400
-55 to 150
-55 to 150
600
420
600
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MURH7040(R)
MURH7060(R)
Average forward current (per pkg)
Peak forward surge current
Maximum instantaneous forward
voltage
Maximum reverse current at rated
DC blocking voltage
Maximum reverse recovery time
Thermal characteristics
Maximum thermal resistance,
junction - case
I_F(AV)
I_FSM
V_F
I_R
T_rr
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 70 A, T_j = 25 °C
T_j = 25 °C
T_j = 125 °C
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
70
1500
1.30
25
3
90
0.60
70
1500
1.70
25
3
110
0.60
Unit
V
V
V
°C
°C
Unit
A
A
V
μA
mA
nS
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
1