MURH7005 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Super Fast Recovery Diode

Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 200 V V_RRM
• Not ESD Sensitive
MURH7005 thru MURH7020R
V_RRM = 50 V - 200 V
I_F(AV) = 70 A
D-67 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURH7005(R)
MURH7010(R)
MURH7020(R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
50
35
50
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
200
V
140
V
200
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MURH7005(R)
Average forward current (per
pkg)
Peak forward surge current
Maximum instantaneous
forward voltage
Maximum reverse current at
rated DC blocking voltage
Maximum reverse recovery time
Thermal characteristics
Maximum thermal resistance,
junction - case
I_F(AV)
I_FSM
V_F
I_R
T_rr
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 70 A, T_j = 25 °C
T_j = 25 °C
T_j = 125 °C
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
70
1500
1.0
25
3
75
0.60
MURH7010(R)
70
1500
1.0
25
3
75
0.60
MURH7020(R) Unit
70
A
1500
A
1.0
V
25
μA
3
mA
75
nS
0.60
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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