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| MURF30040 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Super Fast Recovery Diode | |||
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Silicon Super Fast
Recovery Diode
Features
⢠High Surge Capability
⢠Types from 400 V to 600 V VRRM
⢠Not ESD Sensitive
MURF30040 thru MURF30060R
VRRM = 400 V - 600 V
IF(AV) = 300 A
TO-244 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURF30040(R)
MURF30060(R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
400
280
400
-55 to 150
-55 to 150
600
420
600
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MURF30040(R)
MURF30060(R)
Average forward current (per pkg)
IF(AV)
TC = 140 °C
Peak forward surge current (per leg) IFSM
Maximum instantaneous forward
voltage (per leg)
VF
Maximum reverse current at rated DC
blocking voltage (per leg)
IR
Maximum reverse recovery time (per
leg)
Trr
Thermal characteristics
Maximum thermal resistance, junction -
case (per leg)
RÎJC
tp = 8.3 ms, half sine
IFM = 150 A, Tj = 25 °C
Tj = 25 °C
Tj = 125 °C
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
300
2750
1.30
25
3
110
0.40
300
2750
1.70
25
3
150
0.40
Unit
V
V
V
°C
°C
Unit
A
A
V
μA
mA
nS
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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