MURF20005 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Super Fast Recovery Diode

Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 200 V V_RRM
• Not ESD Sensitive
MURF20005 thru MURF20020R
V_RRM = 50 V - 200 V
I_F(AV) = 200 A
TO-244 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURF20005(R) MURF20010(R) MURF20020(R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
50
35
50
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
200
V
140
V
200
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MURF20005(R)
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous
forward voltage (per leg)
Maximum reverse current at
rated DC blocking voltage (per
leg)
Maximum reverse recovery time
(per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
I_F(AV)
T_C = 140 °C
I_FSM t_p = 8.3 ms, half sine
V_F I_FM = 100 A, T_j = 25 °C
T_j = 25 °C
I_R
T_j = 125 °C
T_rr
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
R_ΘJC
200
2000
1.0
25
3
75
0.45
MURF20010(R)
200
2000
1.0
25
3
75
0.45
MURF20020(R) Unit
200
A
2000
A
1.0
V
25
μA
3
mA
75
nS
0.45
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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