MUR30005CT Datasheet, PDF (1/3 Pages) Naina Semiconductor ltd. – Super Fast Recovery Diode, 300A

Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 200 V V_RRM
• Not ESD Sensitive
MUR30005CT thru MUR30020CTR
V_RRM = 50 V - 200 V
I_F(AV) = 300 A
Twin Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR30005CT(R) MUR30010CT(R) MUR30020CT(R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
50
35
50
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
200
V
140
V
200
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MUR30005CT(R) MUR30010CT(R) MUR30020CT(R) Unit
Average forward current (per
pkg)
Peak forward surge current (per
leg)
Maximum instantaneous forward
voltage (per leg)
Maximum reverse current at
rated DC blocking voltage (per
leg)
Maximum reverse recovery time
(per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
I_F(AV)
I_FSM
V_F
I_R
T_rr
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 150 A, T_j = 25 °C
T_j = 25 °C
T_j = 125 °C
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
300
2750
1.0
25
3
100
0.40
300
2750
1.0
25
3
100
0.40
300
2750
1.0
25
3
100
0.40
A
A
V
μA
mA
nS
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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