MUR2X030A06 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Super Fast Recovery Rectifier
Module Type 60 A
Features
• High Surge Capability
• Type 600 V V_RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MUR2X030A06
V_RRM = 600 V
I_F(AV) = 60 A
SOT-227 Package
Maximum ratings
Parameter
Maximum recurrent peak reverse voltage
Maximum DC blocking voltage
Maximum RMS Voltage
Operating temperature
Storage temperature
Symbol
V_RRM
V_DC
V_RMS
T_j
T_stg
Conditions
Value
600
600
420
-55 to 175
-55 to 175
Electrical characteristics at 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Average forward current (per pkg)
Peak forward surge current (per leg)
I_F(AV)
I_FSM
T_C = 125 °C
8.3 ms, half sine
Maximum instantaneous forward voltage*
(per leg)
V_F
I_FM = 30 A, Tj = 25 °C
Maximum instantaneous reverse current at
rated DC blocking voltage (per leg)
Isolation voltage
Maximum reverse recovery time (per leg)
I_R
T_j = 25 °C
T_j = 150 °C
V_iSO
A.C. 1 minute
t_rr
I_F=0.5 A, I_R=1.0 A, I_RR= 0.25 A
Thermal characteristics
Maximum thermal resistance junction to case
(per leg)
R_Θjc
* Pulse Test: Pulse width 300 µs, Duty < 2 %
Value
60
400
1.5
25
3
2500
60
1.2
Unit
V
V
V
°C
°C
Unit
A
A
V
µA
mA
V
ns
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
1