MUR2540 Datasheet, PDF (1/3 Pages) America Semiconductor, LLC – HIGH POWER- SUPER FAST RECTIFIERS

Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 V to 600 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
MUR2540 thru MUR2560R
V_RRM = 400 V - 600 V
I_F = 25 A
DO-4 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR2540 (R)
MUR2560 (R)
Unit
Repetitive peak reverse
voltage
V_RRM
400
RMS reverse voltage
V_RMS
280
DC blocking voltage
V_DC
400
Continuous forward current
I_F
T_C ≤ 145 °C
25
600
V
420
V
600
V
25
A
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
I_F,SM T_C = 25 °C, t_p = 8.3 ms
T_j
T_stg
500
-55 to 150
-55 to 150
500
A
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MUR2540 (R)
Diode forward voltage
V_F
I_F = 25 A, T_j = 25 °C
1.3
Reverse current
I_R
V_R = 50 V, T_j = 25 °C
V_R = 50 V, T_j = 125 °C
10
3
Recovery Time
Maximum reverse recovery
time
T_RR
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
75
MUR2560 (R)
Unit
1.7
V
10
μA
3
mA
90
ns
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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