MUR20040CT Datasheet, PDF (1/3 Pages) Naina Semiconductor ltd. – Super Fast Recovery Diode, 200A

Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 to 600 V V_RRM
• Not ESD Sensitive
MUR20040CT thru MUR20060CTR
V_RRM = 400 V - 600 V
I_F(AV) = 200 A
Twin Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR20040CT (R)
MUR20060CT (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
400
280
400
-55 to 150
-55 to 150
600
420
600
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MUR20040CT (R)
MUR20060CT (R)
Average forward current (per pkg)
Peak forward surge current (per
leg)
Maximum instantaneous forward
voltage (per leg)
Maximum reverse current at rated
DC blocking voltage (per leg)
Maximum reverse recovery time
(per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
I_F(AV)
T_C = 140 °C
I_FSM t_p = 8.3 ms, half sine
V_F I_FM = 100 A, T_j = 25 °C
I_R
T_j = 25 °C
T_j = 125 °C
T_rr
I_F=0.5 A, I_R=1.0 A,
I_RR= 0.25 A
R_ΘJC
200
2000
1.3
25
3
90
0.45
200
2000
1.7
25
3
110
0.45
Unit
V
V
V
°C
°C
Unit
A
A
V
μA
mA
nS
°C/W
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
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