MSRTA20060AD Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 600 V to 1000 V V_RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MSRTA20060(A)D thru MSRTA200100(A)D
V_RRM = 600 V - 1000 V
I_F(AV) = 200 A
Heavy Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRTA20060(A)D MSRTA20080(A)D MSRTA200100(A)D Unit
Repetitive peak reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_DC
T_j
T_stg
600
600
-55 to 150
-55 to 150
800
800
-55 to 150
-55 to 150
1000
V
1000
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRTA20060(A)D MSRTA20080(A)D MSRTA200100(A)D Unit
Average forward current (per
leg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
I_F(AV)
I_FSM
V_F
I_R
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 200 A, T_j = 25 °C
T_j = 25 °C
T_j = 150 °C
R_Θjc
200
3000
1.1
10
5
0.35
200
3000
1.1
10
5
0.35
200
3000
1.1
10
5
0.35
A
A
V
μA
mA
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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