MSRTA200120A Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Electrically Isolated Base Plate

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 1200 V to 1600 V V_RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MSRTA200120(A)D thru MSRTA200160(A)D
V_RRM = 1200 V - 1600 V
I_F(AV) = 200 A
Heavy Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRTA200120(A)D MSRTA200140(A)D MSRTA200160(A)D Unit
Repetitive peak reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_DC
T_j
T_stg
1200
1200
-55 to 150
-55 to 150
1400
1400
-55 to 150
-55 to 150
1600
V
1600
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRTA200120(A)D MSRTA200140(A)D MSRTA200160(A)D Unit
Average forward current (per
leg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
I_F(AV)
I_FSM
V_F
I_R
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 200 A, T_j = 25 °C
T_j = 25 °C
T_j = 150 °C
R_Θjc
200
3000
1.1
10
5
0.35
200
3000
1.1
10
5
0.35
200
3000
1.1
10
5
0.35
A
A
V
μA
mA
°C/W
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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