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| MSRT20060A Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability | |||
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Silicon Standard
Recovery Diode
Features
⢠High Surge Capability
⢠Types from 600 V to 1000 V VRRM
⢠Isolation Type Package
⢠Electrically Isolated Base Plate
⢠Not ESD Sensitive
MSRT20060(A)D thru MSRT200100(A)D
VRRM = 600 V - 1000 V
IF(AV) = 200 A
Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRT20060(A)D MSRT20080(A)D MSRT200100(A)D Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
600
424
600
-55 to 150
-55 to 150
800
566
800
-55 to 150
-55 to 150
1000
V
707
V
1000
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRT20060(A)D
Average forward current (per
leg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
IF(AV)
IFSM
VF
IR
TC = 140 °C
tp = 8.3 ms, half sine
IFM = 200 A, Tj = 25 °C
Tj = 25 °C
Tj = 150 °C
200
3000
1.1
10
5
Maximum thermal resistance,
junction - case (per leg)
RÎjc
0.35
MSRT20080(A)D MSRT200100(A)D Unit
200
200
A
3000
3000
A
1.1
1.1
V
10
10
μA
5
5
mA
0.35
0.35
°C/W
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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