MSRT150120AD Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 1200 V to 1600 V V_RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MSRT150120(A)D thru MSRT150160(A)D
V_RRM = 1200 V - 1600 V
I_F(AV) = 150 A
Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRT150120(A)D MSRT150140(A)D MSRT150160(A)D Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
1200
848
1200
-55 to 150
-55 to 150
1400
990
1400
-55 to 150
-55 to 150
1600
V
1131
V
1600
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRT150120(A)D MSRT150140(A)D MSRT150160(A)D Unit
Average forward current (per
leg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
I_F(AV)
I_FSM
V_F
I_R
T_C = 140 °C
t_p = 8.3 ms, half sine
I_FM = 150 A, T_j = 25 °C
T_j = 25 °C
T_j = 150 °C
150
2250
1.1
10
5
150
2250
1.1
10
5
150
A
2250
A
1.1
V
10
μA
5
mA
Maximum thermal resistance,
junction - case (per leg)
R_Θjc
0.40
0.40
0.40
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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