MSRT10060AD Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Standard Recovery Diode

Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 600 V to 1000 V V_RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MSRT10060(A)D thru MSRT100100(A)D
V_RRM = 600 V - 1000 V
I_F(AV) = 100 A
Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRT10060(A)D MSRT10080(A)D MSRT100100(A)D Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
600
424
600
-55 to 150
-55 to 150
800
566
800
-55 to 150
-55 to 150
1000
V
707
V
1000
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MSRT10060(A)D
Average forward current (per
leg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
I_F(AV)
I_FSM
V_F
I_R
T_C = 140 °C
t_p = 8.3 ms, half sine
I_FM = 100 A, T_j = 25 °C
T_j = 25 °C
T_j = 150 °C
100
2000
1.1
10
5
Maximum thermal resistance,
junction - case (per leg)
R_Θjc
0.45
MSRT10080(A)D MSRT100100(A)D Unit
100
100
A
2000
2000
A
1.1
1.1
V
10
10
μA
5
5
mA
0.45
0.45
°C/W
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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