MDS200-08 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Three Phase Silicon
Bridge Rectifier
Features
• High Surge Capability
• Types from 800 V to 1600 V V_RRM
• Not ESD Sensitive
MDS200-08 thru MDS200-16
V_RRM = 800 V - 1600 V
I_F(AV) = 200 A
Three Phase Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage
Reverse unrepeated voltage
Operating temperature
Storage temperature
V_RRM
V_RSM
T_j
T_stg
MDS200-08
800
960
-40 to 150
-40 to 125
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Single phase, half sine wave, 50 Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Symbol
Conditions
MDS200-08
Average forward current
Peak forward surge current
I_F(AV)
I_FSM
3-phase, ful-wave,
T_C = 90 °C
1 pulse, 50/60 Hz,
unrepeated
200
2000
Maximum forward voltage (per leg)
V_F I_FM = 200 A, T_j = 25 °C
1.45
Maximum repeated reverse current
T_A = 25 °C
12
at rated DC blocking voltage (per
I_R
leg)
T_A = 125 °C
750
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
R_Θjc
0.15
MDS200-12 MDS200-16 Unit
1200
1600
V
1320
1760
V
-40 to 150
-40 to 150
°C
-40 to 125
-40 to 125
°C
MDS200-12 MDS200-16 Unit
200
200
A
2000
1.45
12
750
2000
A
1.45
V
12
µA
750
µA
0.15
0.15
°C/W
Mar 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
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