MBRTA600150 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Power Schottky Diode

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 150 V to 200 V V_RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MBRTA600150 thru MBRTA600200R
V_RRM = 150 V - 200 V
I_F(AV) = 600 A
Heavy Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRTA600150(R)
MBRTA600200(R)
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
150
106
150
-55 to 150
-55 to 150
200
141
200
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRTA600150(R)
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction -
case (per leg)
I_F(AV)
I_FSM
V_F
I_R
R_ΘJC
T_C = 100 °C
t_p = 8.3 ms, half sine
I_FM = 300 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
600
4000
0.88
4
10
50
0.28
MBRTA600200(R)
600
4000
0.92
4
10
50
0.28
Unit
V
V
V
°C
°C
Unit
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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