MBRTA40045L Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Low VF Silicon Power Schottky Diode

Low V_F Silicon Power
Schottky Diode
Features
• High Surge Capability
• Type 45 V V_RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MBRTA40045(R)L
V_RRM = 45 V
I_F(AV) = 400 A
Heavy Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRTA40045(R)L Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
45
V
32
V
45
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRTA40045(R)L Unit
Average forward current (per pkg)
Peak forward surge current (per leg)
Maximum instantaneous forward voltage (per
leg)
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
I_F(AV)
I_FSM
V_F
I_R
T_C = 100 °C
t_p = 8.3 ms, half sine
I_FM = 200 A, Tj = 25 °C
T_j = 25 °C
T_j = 100 °C
R_ΘJC
400
3000
0.60
5
350
0.35
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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