MBRT60045 Datasheet, PDF (1/3 Pages) America Semiconductor, LLC – HIGH POWER-SCHOTTKY RECTIFIERS

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V_RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MBRT60045 thru MBRT600100R
V_RRM = 45 V - 100 V
I_F(AV) = 600 A
Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRT60045(R) MBRT60060(R) MBRT60080(R) MBRT600100(R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
56
80
-55 to 150
-55 to 150
100
V
70
V
100
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRT60045(R) MBRT60060(R) MBRT60080(R) MBRT600100(R) Unit
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
I_F(AV)
T_C =125 °C
I_FSM t_p = 8.3 ms, half sine
V_F I_FM = 300 A, T_j = 25 °C
T_j = 25 °C
I_R
T_j = 100 °C
T_j = 150 °C
R_ΘJC
600
4000
0.75
1
10
50
0.28
600
4000
0.80
1
10
50
0.28
600
4000
0.84
1
10
50
0.28
600
4000
0.84
1
10
50
0.28
A
A
V
mA
°C/W
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