MBRT50020 Datasheet, PDF (1/3 Pages) America Semiconductor, LLC – HIGH POWER-SCHOTTKY RECTIFIERS

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V V_RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MBRT50020 thru MBRT50040R
V_RRM = 20 V - 40 V
I_F(AV) = 500 A
Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRT50020(R) MBRT50030(R) MBRT50035(R) MBRT50040(R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
V
28
V
40
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRT50020(R) MBRT50030(R) MBRT50035(R) MBRT50040(R) Unit
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum Instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
I_F(AV)
T_C =125 °C
I_FSM t_p = 8.3 ms, half sine
V_F I_FM = 250 A, T_j = 25 °C
T_j = 25 °C
I_R
T_j = 100 °C
T_j = 150 °C
R_ΘJC
500
3500
0.75
1
10
50
0.30
500
3500
0.75
1
10
50
0.30
500
3500
0.75
1
10
50
0.30
500
3500
0.75
1
10
50
0.30
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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