MBRT120150 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Power Schottky Diode

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 150 V to 200 V V_RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MBRT120150 thru MBRT120200R
V_RRM = 150 V - 200 V
I_F(AV) = 120 A
Three Tower Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRT120150(R)
MBRT120200(R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
150
106
150
-55 to 150
-55 to 150
200
141
200
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRT120150(R)
Average forward current (per
pkg)
I_F(AV)
T_C = 125 °C
120
Peak forward surge current
(per leg)
I_FSM
t_p = 8.3 ms, half sine
800
Maximum instantaneous forward
voltage (per leg)
V_F
I_FM = 60 A, T_j = 25 °C
0.88
Maximum instantaneous
T_j = 25 °C
1
reverse current at rated DC
I_R
T_j = 100 °C
10
blocking voltage (per leg)
T_j = 150 °C
30
Thermal characteristics
Thermal resistance, junction-
case (per leg)
R_ΘJC
0.80
MBRT120200(R)
120
800
0.92
1
10
30
0.80
Unit
V
V
V
°C
°C
Unit
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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