MBRH20045L Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Low VF Silicon Power Schottky Diode

Low V_F Silicon Power
Schottky Diode
Features
• High Surge Capability
• Type 45 V V_RRM
• Not ESD Sensitive
MBRH20045(R)L
V_RRM = 45 V
I_F(AV) = 200 A
D-67 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRH20045(R)L Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
45
V
32
V
45
V
-55 to 150
°C
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRH20045(R)L Unit
Average forward current
Peak forward surge current
I_F(AV)
T_C = 100 °C
200
A
I_FSM
t_p = 8.3 ms, half sine
3000
A
Maximum instantaneous forward voltage
V_F
I_FM = 200 A, Tj = 25 °C
0.60
V
Maximum instantaneous reverse
current at rated DC blocking voltage
Thermal characteristics
Maximum thermal resistance,
junction - case
I_R
R_ΘJC
T_j = 25 °C
T_j = 100 °C
5
mA
300
0.35
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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