MBRH20045 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V_RRM
• Not ESD Sensitive
MBRH20045 thru MBRH200100R
V_RRM = 45 V - 100 V
I_F(AV) = 200 A
D-67 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRH20045(R) MBRH20060(R) MBRH20080(R) MBRH200100(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
45
60
80
100
V
32
42
57
70
V
45
60
80
100
V
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRH20045(R) MBRH20060(R) MBRH20080(R) MBRH200100(R) Unit
Average forward current
(per pkg)
I_F
T_C ≤ 136 °C
200
200
200
200
A
Peak forward surge current I_FSM T_C = 25 °C, t_p = 8.3 ms
3000
3000
3000
3000
A
Maximum instantaneous
forward voltage
V_F I_FM = 200 A, T_j = 25 °C
0.70
0.75
0.84
Maximum instantaneous
T_j = 25 °C
1
1
1
reverse current at rated DC
I_R
T_j = 100 °C
10
10
10
blocking voltage
T_j = 150 °C
50
50
50
Thermal characteristics
Thermal resistance, junction
- case
R_thJC
0.35
0.35
0.35
0.84
V
1
10
mA
50
0.35
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1