MBRH12045 Datasheet, PDF (1/3 Pages) America Semiconductor, LLC – HIGH POWER -SCHOTTKY RECTIFIERS

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V_RRM
• Not ESD Sensitive
MBRH12045 thru MBRH120100R
V_RRM = 45 V - 100 V
I_F(AV) = 120 A
D-67 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRH12045 (R) MBRH12060 (R) MBRH12080 (R) MBRH120100 (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
45
60
80
100
V
32
42
57
70
V
45
60
80
100
V
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRH12045 (R) MBRH12060 (R) MBRH12080 (R) MBRH120100 (R) Unit
Average forward current
(per pkg)
I_F(AV)
T_C = 125 °C
120
120
120
120
A
Peak forward surge current I_FSM t_p = 8.3 ms, half sine
2000
2000
2000
2000
A
Maximum instantaneous
forward voltage
V_F I_FM = 120 A, T_j = 25 °C
0.70
Maximum instantaneous
T_j = 25 °C
1
reverse current at rated DC
I_R
T_j = 100 °C
10
blocking voltage
T_j = 150 °C
30
Thermal characteristics
Thermal resistance, junction-
case
R_ΘJC
0.48
0.75
1
10
30
0.48
0.84
1
10
30
0.48
0.84
V
1
10
mA
30
0.48
°C/W
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