MBRH12020 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V V_RRM
• Not ESD Sensitive
MBRH12020 thru MBRH12040R
V_RRM = 20 V - 40 V
I_F(AV) = 120 A
D-67 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRH12020(R) MBRH12030(R) MBRH12035(R) MBRH12040(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
20
30
35
40
V
14
21
25
28
V
20
30
35
40
V
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRH12020(R) MBRH12030(R) MBRH12035(R) MBRH12040(R) Unit
Average forward current
(per pkg)
I_F(AV)
T_C = 125 °C
120
120
120
120
A
Peak forward surge current I_FSM t_p = 8.3 ms, half sine
2000
2000
2000
2000
A
Maximum instantaneous
forward voltage
V_F I_FM = 120 A, T_j = 25 °C
0.70
0.70
0.70
0.70
V
Maximum instantaneous
T_j = 25 °C
1
1
1
1
reverse current at rated DC
I_R
T_j = 100 °C
10
10
10
10
mA
blocking voltage
T_j = 150 °C
30
30
30
30
Thermal characteristics
Thermal resistance, junction-
case
R_ΘJC
0.48
0.48
0.48
0.48
°C/W
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