MBRF500100R Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V_RRM
• Not ESD Sensitive
MBRF50045 thru MBRF500100R
V_RRM = 45 V - 100 V
I_F(AV) = 500 A
TO-244AB Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRF50045(R) MBRF50060(R) MBRF50080(R) MBRF500100(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
45
60
80
100
V
32
42
57
70
V
45
60
80
100
V
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRF50045(R) MBRF50060(R) MBRF50080(R) MBRF500100(R) Unit
Average forward current
(per pkg)
Peak forward surge current
(per leg)
Maximum forward voltage
(per leg)
Reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction-
case (per leg)
I_F(AV)
I_FSM
V_F
I_R
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 250 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
500
3500
0.75
1
10
50
0.30
500
3500
0.78
1
10
50
0.30
500
3500
0.84
1
10
50
0.30
500
3500
0.84
1
10
50
0.30
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1