MBRF300150 Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – Silicon Power Schottky Diode

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 150 V to 200 V V_RRM
• Not ESD Sensitive
MBRF300150 thru MBRF300200R
V_RRM = 150 V - 200 V
I_F(AV) = 300 A
TO-244AB Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRF300150(R)
MBRF300200(R)
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
150
106
150
-55 to 150
-55 to 150
200
141
200
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRF300150(R)
Average forward current
(per pkg)
Peak forward surge
current (per leg)
Maximum forward voltage
(per leg)
Reverse current at rated
DC blocking voltage (per
leg)
Thermal characteristics
Thermal resistance,
junction-case (per leg)
I_F(AV)
I_FSM
V_F
I_R
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 150 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
300
2000
0.88
1
10
30
0.40
MBRF300200(R)
300
2000
0.92
1
10
30
0.40
Unit
V
V
V
°C
°C
Unit
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1