MBRF20040R Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 to 40 V V_RRM
• Not ESD Sensitive
MBRF20020 thru MBRF20040R
V_RRM = 20 V - 40 V
I_F(AV) = 200 A
TO-244AB Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRF20020(R) MBRF20030(R) MBRF20035(R) MBRF20040(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
20
30
35
40
V
14
21
25
28
V
20
30
35
40
V
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRF20020(R) MBRF20030(R) MBRF20035(R) MBRF20040(R) Unit
Average forward current
(per pkg)
Peak forward surge current
(per leg)
Maximum forward voltage
(per leg)
Reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction-
case (per leg)
I_F(AV)
I_FSM
V_F
I_R
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 100 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
200
1500
0.70
1
10
30
0.45
200
1500
0.70
1
10
30
0.45
200
1500
0.70
1
10
30
0.45
200
1500
0.70
1
10
30
0.45
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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