MBRF12020 Datasheet, PDF (1/3 Pages) America Semiconductor, LLC – Silicon Power Schottky Diode

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V V_RRM
• Not ESD Sensitive
MBRF12020 thru MBRF12040R
V_RRM = 20 V - 40 V
I_F(AV) = 120 A
TO-244AB Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRF12020(R) MBRF12030(R) MBRF12035(R) MBRF12040(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
20
30
35
40
V
14
21
25
28
V
20
30
35
40
V
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRF12020(R) MBRF12030(R) MBRF12035(R) MBRF12040(R) Unit
Average forward current
(per pkg)
I_F(AV)
T_C = 125 °C
120
120
120
120
A
Peak forward surge current
(per leg)
I_FSM t_p = 8.3 ms, half sine
800
800
800
800
A
Maximum forward voltage
(per leg)
V_F
I_F = 60 A, T_j = 25 °C
0.70
0.70
0.70
0.70
V
Reverse current at rated DC
blocking voltage (per leg)
I_R
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
1
10
30
1
10
30
1
10
30
1
10
mA
30
Thermal characteristics
Thermal resistance, junction-
case (per leg)
R_ΘJC
0.80
0.80
0.80
0.80
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1