MBR8020 Datasheet, PDF (1/3 Pages) TRANSYS Electronics Limited – SCHOTTKY DIODES STUD TYPE 80 A

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
MBR8020 thru MBR8040R
V_RRM = 20 V - 40 V
I_F(AV) = 80 A
DO-5 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR8020(R) MBR8030(R) MBR8035(R) MBR8040(R) Unit
Repetitive peak reverse voltag
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
20
30
35
40
V
14
21
25
28
V
20
30
35
40
V
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR8020(R) MBR8030(R) MBR8035(R) MBR8040(R) Unit
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum forward voltage
(per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction-
case (per leg)
Mounting torque
I_F(AV)
I_FSM
V_F
I_R
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 80 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
80
1000
0.75
1
10
20
0.50
30
80
1000
0.75
1
10
20
0.50
30
80
1000
0.75
1
10
20
0.50
30
80
A
1000
A
0.75
V
1
10
mA
20
0.50
30
°C/W
Inch ponds
(in-pb)
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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