MBR80100R Datasheet, PDF (1/3 Pages) GeneSiC Semiconductor, Inc. – High Surge Capability

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V_RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
MBR8045 thru MBR80100R
V_RRM = 45 V - 100 V
I_F(AV) = 80 A
DO-5 Package
Maximum ratings, at T_j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit
Repetitive peak reverse voltag
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
V_RRM
V_RMS
V_DC
T_j
T_stg
45
60
80
100
V
32
42
50
70
V
45
60
80
100
V
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
-55 to 150 -55 to 150 -55 to 150 -55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum forward voltage
(per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction-
case (per leg)
Mounting torque
I_F(AV)
I_FSM
V_F
I_R
R_ΘJC
T_C = 125 °C
t_p = 8.3 ms, half sine
I_FM = 80 A, T_j = 25 °C
T_j = 25 °C
T_j = 100 °C
T_j = 150 °C
80
1000
0.75
1
10
20
0.50
30
80
1000
0.78
1
10
20
0.50
30
80
1000
0.84
1
10
20
0.50
30
80
A
1000
A
0.84
V
1
10
mA
20
0.50
30
°C/W
Inch ponds
(in-pb)
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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